?2001 fairchild semiconductor corporation august 2001 sgr20n40l / sgu20n40l rev. a1 igbt sgr20n40l / sgu20n40l sgr20n40l / sgu20n40l general description insulated gate bipolar transistors (igbts) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. they also have wide noise immunity. these devices are very suitable for strobe applications features ? high input impedance ? high peak current capability (150a) ? easy gate drive ? surface mount : sgr20n40l ? straight lead : sgu20n40l absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics notes : (2) mounted on 1? square pcb (fr4 or g-10 material) symbol description sgr / sgu20n40l units v ces collector - emitter voltage 400 v v ges gate - emitter voltage 6v i cm (1) pulsed collector current 150 a p c m a x i m u m p o w e r d i s s i p a t i o n @ t c = 25 c45 w t j operating junction temperature -40 to +150 c t stg storage temperature range -40 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc thermal resistance, junction-to-case -- 3.0 c / w r ja (d-pak) thermal resistance, junction-to-ambient (pcb mount) (2) -- 50 c / w r ja (i-pak) thermal resistance, junction-to-ambient -- 110 c / w application strobe flash. g c e g c e d-pak g e c i-pak ge c
?2001 fairchild semiconductor corporation sgr20n40l / sgu20n40l rev. a1 sgr20n40l / sgu20n40l electrical characteristics of the igbt t c = 25 c unless otherwise noted * notes : recommendation of r g value : r g 15 ? symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 1ma 450 -- -- v i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 10 a i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 0.1 a on characteristics v ge(th) g-e threshold voltage i c = 1ma, v ce = v ge 0.5 1.0 1.4 v v ce(sat) c-e saturation current i c = 150a, v ge = 4.5v 2.0 4.5 8.0 v dynamic characteristics c ies input capacitance v ge = 0v, v ce = 30v, f = 1mhz -- 3800 -- pf c oes output capacitance -- 50 -- pf c res reverse transfer capacitance -- 35 -- pf switching characteristics t d(on) turn-on delay time v cc = 300v, i c = 150a, v ge = 4.5v, r g = 15 ? * resistive load -- 0.2 -- s t r rise time -- 1.7 -- s t d(off) turn-off delay time -- 0.3 0.5 s t f fall time -- 1.5 2.0 s
?2001 fairchild semiconductor corporation sgr20n40l / sgu20n40l rev. a1 sgr20n40l / sgu20n40l fig 1. typical output characteristics fig 2. saturation voltage vs. case temperature at variant current level fig 3. saturation voltage vs. v ge fig 4. saturation voltage vs. v ge fig 5. saturation voltage vs. v ge fig 6. capacitance characteristics 02468 0 50 100 150 200 common emitter t c = 25 5.0v 4.5v 4.0v 3.5v 3.0v v ge = 2.5v collector current, i c [a] collector-emitter voltage, v ce [v] -50 0 50 100 150 2 3 4 5 6 7 common emitter v ge = 4.5v 150a 100a i c = 70a collector-emitter voltage, v ce [v] case temperature, t c [ ] 0123456 0 4 8 12 16 20 i c = 70a 100a 150a common emitter t c = -40 collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0123456 0 4 8 12 16 20 150a 100a i c = 70a common emitter t c = 25 gate-emitter voltage, v ge [v] gate-emitter voltage, v ge [v] 0123456 0 4 8 12 16 20 i c = 70a 100a 150a common emitter t c = 125 collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0 10203040 10 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 cres coes cies capacitance [pf] collector-emitter voltage, v ce [v]
?2001 fairchild semiconductor corporation sgr20n40l / sgu20n40l rev. a1 sgr20n40l / sgu20n40l fig 7. turn-on characteristics vs. gate resistance fig 8. collector current limit vs. gate - emitter voltage limit 0 102030405060 0 2 4 6 common emitter v cc = 300v, r l = 2 t c = 25 gate - emitter voltage, v ge [v] gate-charge, q g [nc] 0246810 0 25 50 75 100 125 150 175 200 collector peak current, i cp [a] gate - emitter voltage, v ge [v]
?2001 fairchild semiconductor corporation trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor international. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. h3 a cex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx? star*power is used under license
file:///c|/pdf/sgr20n40l.html fairchild semiconductor space space space search | parametric | cross reference space product folders and datasheets application notes space space space find products home >> find products >> space space space space products groups space analog and mixed signal discrete interface logic microcontrollers non-volatile memory optoelectronics markets and applications new products product selection and parametric search cross-reference search technical information buy products technical support my fairchild company sgr20n40l discrete, igbt related links request samples dotted line how to order products dotted line product change notices (pcns) dotted line support dotted line distributor and field sales representatives dotted line quality and reliability dotted line design tools contents general description | features | applications | product status/pricing/packaging | models | application notes general description insulated gate bipolar transistors (igbts) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. they also have wide noise immunity. these devices are very suitable for strobe applications. back to top features l high input impedance l high peak current capability (150a) l easy gate drive l surface mount: sgr20n40l l straight lead: sgu20n40l back to top applications l strobe flash back to top space datasheet download this datasheet pdf e-mail this datasheet [e- mail] this page print version product status/pricing/packaging file:///c|/pdf/sgr20n40l.html (1 of 2) [27-jul-02 5:12:32 pm]
file:///c|/pdf/sgr20n40l.html product product status pricing* package type leads packing method sgr20n40ltf full production $1.53 to-252(dpak) 2 tape reel sgr20n40ltm full production $1.53 to-252(dpak) 2 tape reel * 1,000 piece budgetary pricing back to top models package & leads condition software version revision date pspice to-252(dpak)-2 electrical 9.2 may 23, 2001 back to top application notes an-9006: an-9006 igbt application note for camera strobe (146 k) jul 19, 2002 back to top space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///c|/pdf/sgr20n40l.html (2 of 2) [27-jul-02 5:12:32 pm]
product folder - fairchild p/n sgu20n40l - discrete, igbt fairchild semiconductor space space space search | parametric | cross reference space product folders and datasheets application notes space space space find products home >> find products >> space space space space products groups space analog and mixed signal discrete interface logic microcontrollers non-volatile memory optoelectronics markets and applications new products product selection and parametric search cross-reference search technical information buy products technical support my fairchild company sgu20n40l discrete, igbt related links request samples dotted line how to order products dotted line product change notices (pcns) dotted line support dotted line distributor and field sales representatives dotted line quality and reliability dotted line design tools contents general description | features | applications | product status/pricing/packaging | models | application notes general description insulated gate bipolar transistors (igbts) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. they also have wide noise immunity. these devices are very suitable for strobe applications. back to top features l high input impedance l high peak current capability (150a) l easy gate drive l surface mount: sgr20n40l l straight lead: sgu20n40l back to top applications l strobe flash back to top space datasheet download this datasheet pdf e-mail this datasheet [e- mail] this page print version product status/pricing/packaging file:///c|/pdf/sgu20n40l.html (1 of 2) [27-jul-02 5:12:33 pm]
product folder - fairchild p/n sgu20n40l - discrete, igbt product product status pricing* package type leads packing method SGU20N40LTU full production $1.53 to-251(ipak) 3 rail * 1,000 piece budgetary pricing back to top models package & leads condition software version revision date pspice to-251(ipak)-3 electrical 9.2 may 23, 2001 back to top application notes an-9006: an-9006 igbt application note for camera strobe (146 k) jul 19, 2002 back to top space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///c|/pdf/sgu20n40l.html (2 of 2) [27-jul-02 5:12:33 pm]
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